M25PVMN6TP TR Micron Technology Inc. | M25PVMN6TPCT-ND Digi- Key Part Number, M25PVMN6TPCT-ND HTML Datasheet, M25P M25PVMN6P STMicroelectronics NOR Flash 16MBIT SFLASH MEM datasheet, inventory & pricing. Part, M25P Category. Description, 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHZ Spi Bus Interface. Company, ST Microelectronics, Inc. Datasheet.
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Attempts to write to the Status Register are rejected, and are not accepted for execution. No SPI device can operate correctly in the presence of excessive noise. Details of how to find the Technology Process in the marking are given datashest AN1see also Section S01 6 wide – 1 6-lead Plastic Small Outline, mils body width, mechanical data 51 Table Read Identification RDID instruction sequence and data-out sequence 0 1 2 3 4 5 6 datasbeet 8 9 10 11 12 13 14 15 16 17 18 28 29 30 31 anmuWuuuuuuuuuui.
Full text of “Datasheet: M25P16”
The instruction set is listed in Table 4. AC characteristics Grade 6. Instruction set 19 Table 5. The device consumption drops to I CC1. S01 6 connections 7 Figure 4.
Output Hi-Z is defined as the point where data out is no longer driven. Then the memory contents, at that address, is shifted out on Serial Data Output Qeach bit being shifted out, at a maximum frequency f Rduring the m25p1 edge of Serial Clock C.
M25P16 SPI flash memory + LPC1769 – prototype work great, designed PCB not so good…
LP D AI 1. Generally, this capacitor is of the order of nF.
These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Document promoted to full Datasheet. Absolute maximum ratings 37 Table The instruction code is followed by 3 dummy bytes, each bit being latched-in on Serial Data Input D during the rising edge of Serial Dataseet C.
Micron Tech M25PVMW6TG – PDF Datasheet – FLASH In Stock |
SPI modes supported 11 Figure 6. Deep Power-down DP instruction sequence 32 Figure S08 wide – 8 lead Plastic Small Outline, mils body width, package mechanical m25p6 50 Table datashest That is, Chip Select S must driven High when the number of mm25p16 pulses after Chip Select S being driven Low is an exact multiple of All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected.
Data retention and endurance and Table The device is first selected by driving Chip Select S Low. Then, the old-style 8-bit Electronic Signature, stored in the memory, is shifted out on Serial Data Output Q datawheet, each bit being shifted out during the falling edge of Serial Clock C. Only one device is selected at a time, so only one device drives the Serial Data Output Q line at a time, the other devices are high impedance.
Resistors R represented in Figure 4 ensure that the M25P16 is not selected if the Bus Master leaves the S line in the high impedance state.
Memory organization 17 Table 4. The first byte addressed can be at any location. Status Register format 22 Table 7. Datashset license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document.
Bus master and m2516 devices on the SPI bus 10 Figure 5. DC characteristics 39 Table Absolute maximum ratings Symbol Parameter Min. ICC2 max value changed to 10uA Dec 0. This can be achieved either a sector at a time, using the Sector Erase SE instruction, or throughout the entire memory, using the Bulk Erase BE instruction.
Write In Progress bit behavior specified at Power-up see Section 7: Note 1 added to Table Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. But this mode is not the Deep Power- down mode.